Produiten
Lead Terminatioun
Lead Terminatioun
Lead Terminatioun
Main technesch Spezifikatioune:
Bewäert Muecht: 5-800W;
Substratmaterial: BeO, AlN, Al2O3
Nominell Resistenz Wäert: 50Ω
Resistenz Toleranz: ± 5%, ± 2%, ± 1%
Temperatur Koeffizient: ＜150ppm/℃
Operatioun Temperatur: -55 ~ +150 ℃
ROHS Standard: Konform mat
Uwendbar Norm: Q / RFTYTR001-2022
Leadlängt: L wéi am Dateblatt spezifizéiert
(kann no Client Ufuerderunge personaliséiert ginn)
| Muecht(W) | Frequenz | Dimensiounen (Eenheet: mm) | SubstratMaterial | Dateblatt (PDF) | |||||
| A | B | H | G | W | L | ||||
| 5W | 6 ghz | 4.0 | 4.0 | 1.0 | 1.6 | 1.0 | 3.0 | Al2O3 | RFT50A-05TM0404 Fotoen |
| 11 GHz | 1.27 | 2.54 | 0,5 | 1.0 | 0.8 | 3.0 | AlN | RFT50N-05TJ1225 Fotoen | |
| 10 W | 4 ghz | 2.5 | 5.0 | 1.0 | 1.9 | 1.0 | 4.0 | BeO | RFT50-10TM2550 Fotoen |
| 6 ghz | 4.0 | 4.0 | 1.0 | 1.6 | 1.0 | 3.0 | Al2O3 | RFT50A-10TM0404 Fotoen | |
| 8 ghz | 4.0 | 4.0 | 1.0 | 1.6 | 1.0 | 3.0 | BeO | RFT50-10TM0404 Fotoen | |
| 10 GHz | 5.0 | 3.5 | 1.0 | 1.9 | 1.0 | 3.0 | BeO | RFT50-10TM5035 Fotoen | |
| 18 GHz | 5.0 | 2.5 | 1.0 | 1.8 | 1.0 | 3.0 | BeO | RFT50-10TM5023 Fotoen | |
| 20 W | 4 ghz | 2.5 | 5.0 | 1.0 | 1.9 | 1.0 | 4.0 | BeO | RFT50-20TM2550 Fotoen |
| 6 ghz | 4.0 | 4.0 | 1.0 | 1.6 | 1.0 | 3.0 | Al2O3 | RFT50N-20TJ0404 Ubidder | |
| 8 ghz | 4.0 | 4.0 | 1.0 | 1.6 | 1.0 | 3.0 | BeO | RFT50-20TM0404 Fotoen | |
| 10 GHz | 5.0 | 3.5 | 1.0 | 1.9 | 1.0 | 3.0 | BeO | RFT50-20TM5035 Fotoen | |
| 18 GHz | 5.0 | 2.5 | 1.0 | 1.8 | 1.0 | 3.0 | BeO | RFT50-20TM5023 Fotoen | |
| 30 watt | 6 ghz | 6.0 | 6.0 | 1.0 | 1.8 | 1.0 | 5.0 | AlN | RFT50N-30TJ0606 Fotoen |
| 6.0 | 6.0 | 1.0 | 1.8 | 1.0 | 5.0 | BeO | RFT50-30TM0606 Fotoen | ||
| 60 watt | 6 ghz | 6.0 | 6.0 | 1.0 | 1.8 | 1.0 | 5.0 | AlN | RFT50N-60TJ0606 Fotoen |
| 6.0 | 6.0 | 1.0 | 1.8 | 1.0 | 5.0 | BeO | RFT50-60TM0606 Fotoen | ||
| 6,35 | 6,35 | 1.0 | 1.8 | 1.0 | 5.0 | BeO | RFT50-60TJ6363 Fotoen | ||
| 100 Watt | 3 ghz | 6,35 | 9.5 | 1.0 | 1.6 | 1.4 | 5.0 | AlN | RFT50N-100TJ6395 Fotoen |
| 8.9 | 5.7 | 1.0 | 1.6 | 1.0 | 5.0 | AlN | RFT50N-100TJ8957 Fotoen | ||
| 9.5 | 9.5 | 1.0 | 1.6 | 1.4 | 5.0 | BeO | RFT50-100TJ9595 Fotoen | ||
| 4 ghz | 10.0 | 10.0 | 1.0 | 1.8 | 1.4 | 5.0 | BeO | RFT50-100TJ1010 Fotoen | |
| 6 ghz | 6,35 | 6,35 | 1.0 | 1.8 | 1.0 | 5.0 | BeO | RFT50-100TJ6363 Fotoen | |
| 8.9 | 5.7 | 1.0 | 1.6 | 1.0 | 5.0 | AlN | RFT50N-100TJ8957B Fotoen | ||
| 8 ghz | 9,0 | 6.0 | 1.5 | 2.0 | 1.0 | 5.0 | BeO | RFT50-100TJ0906C Fotoen | |
| 150 Watt | 3 ghz | 6,35 | 9.5 | 1.0 | 1.6 | 1.4 | 5.0 | AlN | RFT50N-150TJ6395 Fotoen |
| 9.5 | 9.5 | 1.0 | 1.6 | 1.4 | 5.0 | BeO | RFT50-150TJ9595 Ubidder | ||
| 4 ghz | 10.0 | 10.0 | 1.0 | 1.8 | 1.4 | 5.0 | BeO | RFT50-150TJ1010 Fotoen | |
| 6 ghz | 10.0 | 10.0 | 1.0 | 1.8 | 1.4 | 5.0 | BeO | RFT50-150TJ1010B Fotoen | |
| 200 Watt | 3 ghz | 9.5 | 9.5 | 1.0 | 1.6 | 1.4 | 5.0 | BeO | RFT50-200TJ9595 Fotoen |
| 4 ghz | 10.0 | 10.0 | 1.0 | 1.8 | 1.4 | 5.0 | BeO | RFT50-200TJ1010 Fotoen | |
| 10 GHz | 12.7 | 12.7 | 2.0 | 3.5 | 2.4 | 5.0 | BeO | RFT50-200TM1313B Fotoen | |
| 250 Watt | 3 ghz | 12.0 | 10.0 | 1.5 | 2.5 | 1.4 | 5.0 | BeO | RFT50-250TM1210 Ubidder |
| 10 GHz | 12.7 | 12.7 | 2.0 | 3.5 | 2.4 | 5.0 | BeO | RFT50-250TM1313B Fotoen | |
| 300 Watt | 3 ghz | 12.0 | 10.0 | 1.5 | 2.5 | 1.4 | 5.0 | BeO | RFT50-300TM1210 Fotoen |
| 10 GHz | 12.7 | 12.7 | 2.0 | 3.5 | 2.4 | 5.0 | BeO | RFT50-300TM1313B Fotoen | |
| 400 Watt | 2 ghz | 12.7 | 12.7 | 2.0 | 3.5 | 2.4 | 5.0 | BeO | RFT50-400TM1313 |
| 500 Watt | 2 ghz | 12.7 | 12.7 | 2.0 | 3.5 | 2.4 | 5.0 | BeO | RFT50-500TM1313 |
| 800 watt | 1 ghz | 25.4 | 25.4 | 3.2 | 4 | 6 | 7 | BeO | RFT50-800TM2525 |
Iwwersiicht
Leaded Terminatioun gëtt gemaach andeems Dir entspriechend Substratgréisst a Material auswielt baséiert op verschiddene Frequenzfuerderungen a Kraaftfuerderunge, duerch Resistenz, Circuitdruck, a Sintering.Déi allgemeng benotzt Substratmaterialien kënnen haaptsächlech Berylliumoxid, Aluminiumnitrid, Aluminiumoxid oder besser Wärmevergëftungsmaterialien sinn.
Leaded Terminatioun, ënnerdeelt an dënnem Filmprozess an décke Filmprozess.Et ass entworf baséiert op spezifesch Muecht an Frequenz Ufuerderunge, an dann duerch Prozess veraarbecht.Wann Dir speziell Besoinen hutt, kontaktéiert w.e.g. eis Verkeeferpersonal fir spezifesch Léisunge fir Personnalisatioun ze bidden.
